An investigation on the reliability of AlGaAs/GaAs HEMTs

Brambilla, G. ; D'Ambrosio, A. ; Fattore, G. ; Galante, P. ; Tedeseo, C. ; Castellaneta, G. (1992) An investigation on the reliability of AlGaAs/GaAs HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract

The results of an investigation concerning reliability of AlGaAs/GaAs High Electron Mobility Transistor devices are presented. Such investigation, carried out on devices from two different manufacturers, has been performed under an ESA contract (CCN N. 2 to 6462/85/NL/JG(SC)) aimed at providing sufficient confidence in HEMT devices, so to allow their use in satellite low noise receivers.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Brambilla, G.
D'Ambrosio, A.
Fattore, G.
Galante, P.
Tedeseo, C.
Castellaneta, G.
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:46
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