An investigation on the reliability of AlGaAs/GaAs HEMTs

Brambilla, G. ; D'Ambrosio, A. ; Fattore, G. ; Galante, P. ; Tedeseo, C. ; Castellaneta, G. (1992) An investigation on the reliability of AlGaAs/GaAs HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
Full text disponibile come:
[thumbnail of GAAS_92_047.pdf]
Anteprima
Documento PDF
Download (2MB) | Anteprima

Abstract

The results of an investigation concerning reliability of AlGaAs/GaAs High Electron Mobility Transistor devices are presented. Such investigation, carried out on devices from two different manufacturers, has been performed under an ESA contract (CCN N. 2 to 6462/85/NL/JG(SC)) aimed at providing sufficient confidence in HEMT devices, so to allow their use in satellite low noise receivers.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Brambilla, G.
D'Ambrosio, A.
Fattore, G.
Galante, P.
Tedeseo, C.
Castellaneta, G.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:46
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^