Abstract

The use of electric field simulation to extract thermal resistance of power transistor for circuit analysis is described. Compared with conventional techniques based on thermal field simulation, our approach provides directly usable results for circuit analysis, and is easier to be accessed by device and circuit engineers. Instead of conventionally used lumped elements, a multi-port black box is used to represent the thermal circuit, which makes the thermal circuit implementation easy for multi-finger devices. The technique proposed is illustrated by the example of multi-finger HBT.