Influence of dispersive effects on large-signal models based on differential parameter integration

Zucchelli, G. ; Santarelli, A. ; Raffo, A. ; Vannini, G. ; Filicori, F. (2003) Influence of dispersive effects on large-signal models based on differential parameter integration. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

In the paper is shown that,when devices are strongly affected by low-frequency dispersion effects, simply deriving the i/v characteristics through direct integration of bias-dependent differential parameters leads to results which are only locally self-consistent and coherent with empirical data.Dynamic drain current deviations due to charge trapping and self-heating phenomena in FETs, introducing a more complex dependence on average applied voltages and power in the dynamic i/v characteristics,must be taken into account by means of accurate approaches, such as the recently proposed equivalent voltage model [2 ]. Instead,integration of the low-frequency differentialparameters in a suitably modified equivalent voltage domain is shown to be consistent with device physics. Experimental evidence is provided in the paper.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Zucchelli, G.
Santarelli, A.
Raffo, A.
Vannini, G.
Filicori, F.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:53
URI

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