High-Performance Integrated RF-MEMS: Part 1-The Process

Morris, Arthur S. ; Cunningham, Shawn ; Dereus, Dana ; Schröpfer, Gerold (2003) High-Performance Integrated RF-MEMS: Part 1-The Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

RF MEMS have been pursued for more than a decade as a solution to high-performance on-chip fixed, tunable and switchable passives.However,the implementation of RF-MEMS into products has remained elusive.This is partly due to special-purpose processes that only supported a narrow application field,in many cases optimized for single devices.This prevented aggregation of volumes to justify the manufacturing infrastructure of even a single production foundry.This paper presents a single process that has been implemented in multiple foundries and highlights a wide range of high-performance devices including switches,inductors,varactors,and phase-shifters that have been or are being built using this process.This process thus forms the foundation for a wide range of reconfigurable and tunable RF passive circuits.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Morris, Arthur S.
Cunningham, Shawn
Dereus, Dana
Schröpfer, Gerold
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:56
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