High-Performance Integrated RF-MEMS: Part 1-The Process

Morris, Arthur S. ; Cunningham, Shawn ; Dereus, Dana ; Schröpfer, Gerold (2003) High-Performance Integrated RF-MEMS: Part 1-The Process. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

RF MEMS have been pursued for more than a decade as a solution to high-performance on-chip fixed, tunable and switchable passives.However,the implementation of RF-MEMS into products has remained elusive.This is partly due to special-purpose processes that only supported a narrow application field,in many cases optimized for single devices.This prevented aggregation of volumes to justify the manufacturing infrastructure of even a single production foundry.This paper presents a single process that has been implemented in multiple foundries and highlights a wide range of high-performance devices including switches,inductors,varactors,and phase-shifters that have been or are being built using this process.This process thus forms the foundation for a wide range of reconfigurable and tunable RF passive circuits.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Morris, Arthur S.
Cunningham, Shawn
Dereus, Dana
Schröpfer, Gerold
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:56
URI

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