Very Wideband automated On-Wafer noise figure and Gain measurements At 50-110

Vähä-Heikkilä, T. ; Lahdes, M. ; Kantanen, M. ; Karttaavi, T. ; Tuovinen, J. (2002) Very Wideband automated On-Wafer noise figure and Gain measurements At 50-110. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
Full text disponibile come:
[thumbnail of GaAs_10_Vaha-Heikkila.pdf]
Anteprima
Documento PDF
Download (411kB) | Anteprima

Abstract

On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 GHz frequency range. Wafer scale noise figure and insertion gain measurements can be done in an automatic manner using PC controlled automated probe station and in-house written software. In narrow band measurements, large systematic errors may remain undiscovered. These errors are usually caused by reflections in the set-up, which are difficult to calibrate out. Wideband measurements are often the only method, which can efficiently reveal these errors. This aspect is increasingly important as frequency increases.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Vähä-Heikkilä, T.
Lahdes, M.
Kantanen, M.
Karttaavi, T.
Tuovinen, J.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:35
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^