Vähä-Heikkilä, T. ; Lahdes, M. ; Kantanen, M. ; Karttaavi, T. ; Tuovinen, J.
(2002)
Very Wideband automated On-Wafer noise figure and Gain measurements At 50-110.
In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract
On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 GHz frequency range. Wafer scale noise figure and insertion gain measurements can be done in an automatic manner using PC controlled automated probe station and in-house written software. In narrow band measurements, large systematic errors may remain undiscovered. These errors are usually caused by reflections in the set-up, which are difficult to calibrate out. Wideband measurements are often the only method, which can efficiently reveal these errors. This aspect is increasingly important as frequency increases.
Abstract