Very Wideband automated On-Wafer noise figure and Gain measurements At 50-110

Vähä-Heikkilä, T. ; Lahdes, M. ; Kantanen, M. ; Karttaavi, T. ; Tuovinen, J. (2002) Very Wideband automated On-Wafer noise figure and Gain measurements At 50-110. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 GHz frequency range. Wafer scale noise figure and insertion gain measurements can be done in an automatic manner using PC controlled automated probe station and in-house written software. In narrow band measurements, large systematic errors may remain undiscovered. These errors are usually caused by reflections in the set-up, which are difficult to calibrate out. Wideband measurements are often the only method, which can efficiently reveal these errors. This aspect is increasingly important as frequency increases.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Vähä-Heikkilä, T.
Lahdes, M.
Kantanen, M.
Karttaavi, T.
Tuovinen, J.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:35
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