Abstract

A systematic evaluation of power performances of AlGaN/GaN HEMTs has been performed by means of CW on wafer Load Pull measurements at X band. Those measurements have been correlated to the results obtained through I-V and S-parameters pulsed measurements and a strong correlation has been found between the two types of measurement. Power up to 6Watts has been measured on a 1.2 mm device that can be further improved if trapping effects can be removed. A non linear electrical model of the 0.25x 1200 µm² transistor taken from the I-V and the S-parameters pulsed measurements is validated by CW load pull measures.