Charbonniaud, C. ; Gasseling, T. ; De Meyer, S. ; Quéré, R. ; Teyssier, J.P. ; Barataud, D. ; Nébus, J.M ; Martin, T. ; Grimbert, B. ; Hoel, V. ; Caillas, N. ; Morvan, E.
(2004)
Power Performance Evaluation of AlGaN/GaN
HEMTs through Load Pull and Pulsed I-V
Measurements.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
A systematic evaluation of power performances of AlGaN/GaN HEMTs has been performed by means of CW on wafer Load Pull measurements at X band. Those measurements have been correlated to the results obtained through I-V and S-parameters pulsed measurements and a strong correlation has been found between the two types of measurement. Power up to 6Watts has been measured on a 1.2 mm device that can be further improved if trapping effects can be removed. A non linear electrical model of the 0.25x 1200 µm² transistor taken from the I-V and the S-parameters pulsed measurements is validated by CW load pull measures.
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