Physics-Based Low-Frequency Noise Modelling in Small- and Large-Signal RF Device Operation

Conte, G. ; Donati Guerrieri, S. ; Bonani, F. ; Ghione, G. (2004) Physics-Based Low-Frequency Noise Modelling in Small- and Large-Signal RF Device Operation. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

The paper presents a generalized Green’s function approach to the simulation of trap-assisted generationrecombination (GR) noise in RF devices. By exploiting a few noninteracting trap levels, the superposition of the corresponding (stationary) GR spectra is shown, in a simple yet significant case study, to reproduce a 1/f or 1/f-like behaviour over a prescribed frequency range. The same trap distribution is also exploited for large-signal, cyclostationary noise simulations in forced periodic conditions. In this case, frequency conversion effects are present, and the low-frequency noise is shown to be upconverted from baseband to the other noise sidebands. The frequency conversion effects are also investigated in the case of a junction diode.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Conte, G.
Donati Guerrieri, S.
Bonani, F.
Ghione, G.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Giu 2005
Ultima modifica
17 Feb 2016 14:11
URI

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