Physics-Based Low-Frequency Noise Modelling in Small- and Large-Signal RF Device Operation

Conte, G. ; Donati Guerrieri, S. ; Bonani, F. ; Ghione, G. (2004) Physics-Based Low-Frequency Noise Modelling in Small- and Large-Signal RF Device Operation. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

The paper presents a generalized Green’s function approach to the simulation of trap-assisted generationrecombination (GR) noise in RF devices. By exploiting a few noninteracting trap levels, the superposition of the corresponding (stationary) GR spectra is shown, in a simple yet significant case study, to reproduce a 1/f or 1/f-like behaviour over a prescribed frequency range. The same trap distribution is also exploited for large-signal, cyclostationary noise simulations in forced periodic conditions. In this case, frequency conversion effects are present, and the low-frequency noise is shown to be upconverted from baseband to the other noise sidebands. The frequency conversion effects are also investigated in the case of a junction diode.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Conte, G.
Donati Guerrieri, S.
Bonani, F.
Ghione, G.
Subjects
DOI
Deposit date
15 Jun 2005
Last modified
17 Feb 2016 14:11
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