Integration of components in a 50 nm InGaAs- InAlAs-InP HEMT process with pseudomorphic In0.65Ga0.35As channel

Mellberg, Anders ; Malmkvist, Mikael ; Grahn, Jan ; Rorsman, Niklas ; Zirath, Herbert (2004) Integration of components in a 50 nm InGaAs- InAlAs-InP HEMT process with pseudomorphic In0.65Ga0.35As channel. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

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Abstract

The basic active and passive elements for a 50 nm InGaAs-InAlAs-InP HEMT process with pseudomorphic InGaAs channel have been realized. The design and fabrication of 50 nm gate length InP HEMTs, MIM capacitors and thin film resistors have been studied. The integration of the components in a microstrip-based MMIC process has been proven by the successful demonstration of a wideband amplifier.

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