50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using a non-annealed ohmic contact process

Moran, D.A.J. ; Boyd, E. ; Elgaid, K. ; McLelland, H. ; Stanley, C.R. ; Thayne, I.G. (2004) 50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using a non-annealed ohmic contact process. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

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Abstract

A 50nm T-gate lattice-matched InP HEMT technology is presented with which devices with figures of 1600mS/mm for DC transconductance and 430GHz for cutoff frequency fT have been realised. This performance can be attributed to the use of a non-annealed/non-alloyed ohmic contact process which acts to reduce parasitic access resistances to the device. To the best of our knowledge, hese performance figures are the highest reported to date for a HEMT device fabricated from a lattice-matched InP material system.

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