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Winkler, Wolfgang ; Borngräber, Johannes
(2004)
LC-Oscillator for 94 GHz Automotive Radar System
Fabricated in SiGe:C BiCMOS Technology.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
This paper presents the design and measurement of a voltage-controlled oscillator (VCO) for the use in a 94 GHz automotive radar system and other applications. The oscillator has been fabricated in a 200 GHz SiGe:C BiCMOS technology with 0.25 µm minimum feature size. The oscillator is fully integrated on a single chip with a chip area of only 0.25 mm2. The fabricated oscillator has a tuning range of 2.2 GHz and a supply voltage of -3 Volt.
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