Distortion Characterization and Neural Network Modeling for Microwave Devices

Giannini, F. ; Colantonio, P. ; Orengo, G. ; Serino, A. (2004) Distortion Characterization and Neural Network Modeling for Microwave Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

A new method for characterization of HEMT distortion parameters, which extracts the coefficents of Taylor series expansion of Ids(Vgs,Vds), including all crossterms, from low-frequency harmonic measurements, has been developed. The extracted parameters will be used either in a Volterra series model around a fixed bias point for third order characterization of small-signal Ids nonlinearity, and in a large-signal model of Ids characteristic, where its partial derivatives have been locally characterized up to the third order in the whole bias region, using a novel neural network representation. The two models have been verified by harmonic measurements on a AMS HEMT at 5 GHz.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Giannini, F.
Colantonio, P.
Orengo, G.
Serino, A.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:13
URI

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