Johansen, Tom K. ; Vidkjær, Jens ; Krozer, Viktor
(2004)
Consistent Large-Signal Modeling of SiGe HBT
Devices.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
In this paper the applicability of the VBIC95 model for consistent modeling of SiGe HBT devices is investigated. A parameter extraction method is described, including quasi-saturation, substrate parasitics, self-heating and weak avalanche multiplication. Consistency between large-signal and bias-dependent small-signal modeling is assured by extraction several VBIC95 model parameters from a dedicated small-signal model. The VBIC95 model is experimentally verified against DC and RF measurements on a 8x0.35µm 2 area SiGe HBT device.
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