A Low Voltage 12-GHz Silicon-Germanium Static frequency divider with a Selectable Division Ratio

Masini, L. ; Golfarelli, A. ; Pozzoni, M. (2002) A Low Voltage 12-GHz Silicon-Germanium Static frequency divider with a Selectable Division Ratio. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

An integrated 12-GHz static frequency divider with a selectable division ratio (16/1, 64/1) realised in a Silicon Germanium technology dedicated for high volume production, is presented. It operates at low bias voltage (2.7-3.6V) providing balanced output signals on 50-ohm loads. The chosen architecture, the adopted design approach and used technology led to a good trade-off among maximum input frequency, input sensitivity, noise floor, power consumption, division ratioes and die size compared with the current high frequency dividers. The circuit features make itself a versatile block for high frequency PLL systems, while the circuit core can be used as a macrocell for the design of totally integrated fast PLL’s.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Masini, L.
Golfarelli, A.
Pozzoni, M.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:36
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