Bolognesi, C.R. ; Liu, H.G. ; Watkins, S.P.
(2004)
The Fabrication and Characterization of High-
Performance InP DHBTs (Invited).
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
We review the salient factors in the
development of high-speed type-II NpN InP/GaAsSb/InP
DHBTs. This new technology has swiftly transitioned from
its 1997 launch in the university laboratory, to industrial
production in 2004: the short incubation period can be read
as clear evidence that InP/GaAsSb/InP DHBTs afford real
world strategic advantages for the organizations that were
first to reach market with it. The present article surveys the
various approaches taken in the development 300 GHz
fT/fMAX DHBTs for telecom and test applications: we present
both the advantages and shortcomings associated with
InP/GaAsSb/InP DHBTs. The current performance limiting
factors are described and tentative projections are made for
the future.
Abstract
We review the salient factors in the
development of high-speed type-II NpN InP/GaAsSb/InP
DHBTs. This new technology has swiftly transitioned from
its 1997 launch in the university laboratory, to industrial
production in 2004: the short incubation period can be read
as clear evidence that InP/GaAsSb/InP DHBTs afford real
world strategic advantages for the organizations that were
first to reach market with it. The present article surveys the
various approaches taken in the development 300 GHz
fT/fMAX DHBTs for telecom and test applications: we present
both the advantages and shortcomings associated with
InP/GaAsSb/InP DHBTs. The current performance limiting
factors are described and tentative projections are made for
the future.
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:14
URI
Other metadata
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:14
URI
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