Abstract

We review the salient factors in the development of high-speed type-II NpN InP/GaAsSb/InP DHBTs. This new technology has swiftly transitioned from its 1997 launch in the university laboratory, to industrial production in 2004: the short incubation period can be read as clear evidence that InP/GaAsSb/InP DHBTs afford real world strategic advantages for the organizations that were first to reach market with it. The present article surveys the various approaches taken in the development 300 GHz fT/fMAX DHBTs for telecom and test applications: we present both the advantages and shortcomings associated with InP/GaAsSb/InP DHBTs. The current performance limiting factors are described and tentative projections are made for the future.