Low temperature MBE grown GaAs for terahertz radiation applications

Krotkus, A. ; Bertulis, K. ; Adomavicius, R. (2004) Low temperature MBE grown GaAs for terahertz radiation applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

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Abstract

Attempts to optimize recombination characteristics of LTG GaAs layers for their use in terahertz (THz) radiation devices were performed. Femtosecond laser based transient reflectivity and optical pump – THz or mid-IR probe techniques were employed for the electron and, respectively, hole trapping time determination. THz range devices manufactured from LTG GaAs layers grown and annealed at different temperatures were investigated.

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