Low temperature MBE grown GaAs for terahertz radiation applications

Krotkus, A. ; Bertulis, K. ; Adomavicius, R. (2004) Low temperature MBE grown GaAs for terahertz radiation applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

Attempts to optimize recombination characteristics of LTG GaAs layers for their use in terahertz (THz) radiation devices were performed. Femtosecond laser based transient reflectivity and optical pump – THz or mid-IR probe techniques were employed for the electron and, respectively, hole trapping time determination. THz range devices manufactured from LTG GaAs layers grown and annealed at different temperatures were investigated.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Krotkus, A.
Bertulis, K.
Adomavicius, R.
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:15
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