Krotkus, A. ; Bertulis, K. ; Adomavicius, R.
(2004)
Low temperature MBE grown GaAs for terahertz
radiation applications.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
Attempts to optimize recombination characteristics of LTG GaAs layers for their use in terahertz (THz) radiation devices were performed. Femtosecond laser based transient reflectivity and optical pump – THz or mid-IR probe techniques were employed for the electron and, respectively, hole trapping time determination. THz range devices manufactured from LTG GaAs layers grown and annealed at different temperatures were investigated.
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