Mijalkovic, S. ; Burghartz, J.N.
(2004)
Compact Modelling of SiGe HBTs.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
The main goal of this paper is to outline principle ideas and conceptual differences in modern compact modelling procedures for SiGe HBTs. Instead of going into description of particular model structures, the principle approaches to SiGe HBT compact modelling have been analyzed in terms of main transfer current and corresponding charges. Special emphasis is put on the modelling of the Early effect, quasi-neutral base recombination, high-injection and temperature effects.
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