Abstract

Heterojunction bipolar transistors with carbon-doped SiGe base layer (SiGe:C HBTs) showing fT and fmax values as high as 200 GHz have been developed and integrated into a 0.25µm CMOS platform. The combination of these high-performance HBTs with a modern CMOS backbone and a full menu of passive elements enables the fabrication of advanced wireless communication and radar systems. In this paper, we address the application of IHP’s 200GHz SiGe:C BiCMOS process in two fields, the wireless communication in the 60GHz ISM band and radar applications at 24GHz, 77GHz and at frequencies above 94GHz.