GaN THz Electronics

Pavlidis, Dimitris (2004) GaN THz Electronics. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

Salva citazione

Citato da

Full text disponibile come:

Anteprima

Documento PDF
Download (209kB) | Anteprima

Abstract

The use of GaN in THz electronic applications is discussed. The devices addressed include Negative Differential Resistance (NDR), Superlattice diodes and Plasma Wave devices. Fundamental considerations of the transport properties are made to explore the high frequency potential of this material system. The use of new concepts for GaN THz electronics is also addressed.

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Atto)

Autori