GaN THz Electronics

Pavlidis, Dimitris (2004) GaN THz Electronics. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

The use of GaN in THz electronic applications is discussed. The devices addressed include Negative Differential Resistance (NDR), Superlattice diodes and Plasma Wave devices. Fundamental considerations of the transport properties are made to explore the high frequency potential of this material system. The use of new concepts for GaN THz electronics is also addressed.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Pavlidis, Dimitris
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:16
URI

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