Pavlidis, Dimitris
(2004)
GaN THz Electronics.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
The use of GaN in THz electronic applications is discussed. The devices addressed include Negative Differential Resistance (NDR), Superlattice diodes and Plasma Wave devices. Fundamental considerations of the transport properties are made to explore the high frequency potential of this material system. The use of new concepts for GaN THz electronics is also addressed.
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