Measurements and Simulations of Hot-Carrier Degradation Effects in AlGaAs/GaAs HFETs

Mazzanti, A. ; Verzellesi, G. ; Basile, A.F. ; Canali, C. ; Sozzi, G. ; Menozzi, R. (2002) Measurements and Simulations of Hot-Carrier Degradation Effects in AlGaAs/GaAs HFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Salva citazione

Citato da

Full text disponibile come:

Anteprima

Documento PDF
Download (387kB) | Anteprima

Abstract

Hot-carrier degradation effects are investigated in AlGaAs/GaAs HFETs by coupling measurements and two-dimensional device simulations. It is shown that only a simultaneous, localised increase of defects at the gate-drain recess surface and channel-buffer interface can thoroughly account for the observed post-stress device behaviour in terms of drain saturation current decrease, reverse gate current increase, gate-lag enhancement.

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Atto)

Autori