Mazzanti, A. ; Verzellesi, G. ; Basile, A.F. ; Canali, C. ; Sozzi, G. ; Menozzi, R.
(2002)
Measurements and Simulations of Hot-Carrier Degradation Effects in AlGaAs/GaAs HFETs.
In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract
Hot-carrier degradation effects are investigated in AlGaAs/GaAs HFETs by coupling measurements and two-dimensional device simulations. It is shown that only a simultaneous, localised increase of defects at the gate-drain recess surface and channel-buffer interface can thoroughly account for the observed post-stress device behaviour in terms of drain saturation current decrease, reverse gate current increase, gate-lag enhancement.
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