Design and fabrication of short gate-length heterostructure charge coupled devices for transversal filter applications

Tan, Hiang Teik ; Hunter, Ian C. ; Snowden, Christopher M. ; Ranson, Richard (2005) Design and fabrication of short gate-length heterostructure charge coupled devices for transversal filter applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper presents the first reported quarter-micron double delta doped AlGaAs/ InGaAs charge coupled device for microwave filter applications. The design and fabrication of conventional and multi tapped delay line MMICs for RF filter applications are also discussed. Schrödinger and Poisson’s equations are self consistently solved with current continuity equations to show the variation in channel charge concentration as the gate voltagesare varied. The device is implemented as a recessed capacitive gate structure which is fabricated using established GaAs heterostructure MMIC technology to ensure good repeatability.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Tan, Hiang Teik
Hunter, Ian C.
Snowden, Christopher M.
Ranson, Richard
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:17
URI

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