Abstract

The present paper reports on the implementation of electromechanical bias networks to be employed in an automated experimental set-up for the low frequency noise characterization of bipolar transistors. The obtained bias networks allowed to improve the automatization degree of the experimental set-up, reducing therefore the time and the efforts for the systematic characterization necessary for the identification of non-linear low frequency noise models. The electromechanical bias networks were successfully applied to the systematic characterization at wafer level of microwave GaInP/GaAs heterojunction bipolar transistors.