A new self-aligned technique for HBTs on GaAs using electrolytical deposition of base metal

Schufiler, M. ; Statzner, T. ; Granero, S. ; Hartnagel, H.L. (1997) A new self-aligned technique for HBTs on GaAs using electrolytical deposition of base metal. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

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Abstract

A new self-aligned process for base contacts in HBTs based on electrolytic metal deposition is presented. The goal of this technique is to simplify the processing, minimise the base series resistance and to metal-passivate the extrinsic base. Compatibility to a conventional HBT process is demonstrated. As an outlook a HBT structure with improved thermal properties, based on the presented technology, is proposed.

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