ROUX, P. ; BAEYENS, Y. ; WOHLGEMUTH, O. ; CHEN, Y.K.
(2005)
A monolithic integrated 180 GHz SiGe HBT Push-Push Oscillator.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
Full text available as:
Preview |
PDF
Download (117kB) | Preview |
Abstract
A fully integrated single-ended output push-push oscillator is realized using an advanced 0.2µm SiGe HBT process. Up to –5 dBm output power is achieved at 180 GHz using a technology with a transition frequency fT of 200 GHz and maximum oscillation frequency fMAX of 275 GHz. Preliminary phase noise measurements show a phase noise of less than –90 dBc/Hz at 1 MHz offset from the 180 GHz carrier.
Abstract
Other metadata
Downloads
Downloads
Staff only:
