A high-efficiency HBT-based class-E power amplifier for 2 GHz

Milosevic, Dusan ; van der Tang, Johan ; van Roermund, Arthur (2005) A high-efficiency HBT-based class-E power amplifier for 2 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

A Class-E power amplifier (PA) based on a GaAs heterojunction bipolar transistor (HBT) is presented. The single-ended single-stage PA delivers 24 dBm of output power at 2 GHz, achieves a peak power added efficiency (PAE) of 68% and exhibits an excellent transducer power gain higher than 16 dB. The PAE remains high over a wide output power range. The circuit contains the standard 50-Ohm input and output match and is capable of high-efficiency power amplification of constant-envelope signals, which has been demonstrated with the GMSK signal. Both lumped- and distributed-components concepts for the practical implementation of the load network are presented and discussed.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Milosevic, Dusan
van der Tang, Johan
van Roermund, Arthur
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:20
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