Abstract

In this contribution, the authors report an approach for constructing a scalable small-signal distributed model. This model, whose elements are defined per unit gate width, has been used to simulate the small-signal behaviour of three monolithic MESFET devices which only differ in the gate width (25, 50 and 75 \im). S-parameters measured in the 1-40 GHz frequency range at a wide variety of bias conditions were used to perform the simulations. The difficulty to produce good scalable models is shown as well as the need to make use of measurements of identical devices with different gate widths, not only to develop a scalable model, but also to provide physical meaning to the equivalent circuit.