A direct coupling between the semiconductor equations describing a GaInP/GaAs HBT in a circuit simulator for the co-design of microwave devices and circuits

Sommet, R. ; Perreai, Y. ; Quere, R. (1997) A direct coupling between the semiconductor equations describing a GaInP/GaAs HBT in a circuit simulator for the co-design of microwave devices and circuits. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

This paper describes the direct coupling between a physical device simulator and a circuit simulator based on the Harmonic Balance (Hit) technique. The semiconductor device equations adopted concern a GaInP/GaAs HBT for power applications. A full computation of the Jacobian matrix for convergence improvement has been implemented. It provides us with a powerful tool for the codesign of devices and circuits which has been successfully tested to simulate the power transfer characteristic of a device operating in class AB,

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Sommet, R.
Perreai, Y.
Quere, R.
Settori scientifico-disciplinari
DOI
Data di deposito
23 Nov 2005
Ultima modifica
17 Feb 2016 14:20
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