Sommet, R. ; Perreai, Y. ; Quere, R.
(1997)
A direct coupling between the semiconductor equations describing a GaInP/GaAs HBT in a circuit simulator for the co-design of microwave devices and circuits.
In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract
This paper describes the direct coupling between a physical device simulator and a circuit simulator based on the Harmonic Balance (Hit) technique. The semiconductor device equations adopted concern a GaInP/GaAs HBT for power applications. A full computation of the Jacobian matrix for convergence improvement has been implemented. It provides us with a powerful tool for the codesign of devices and circuits which has been successfully tested to simulate the power transfer characteristic of a device operating in class AB,
Abstract