Theoretical analysis of material and high frequencies performence of metamorphic In Al_As/InGa_As (0.3 < x <0.6) HEMT devices on GaAs substrate.

Happy, H. ; Bollaert, S. ; Foure, H. ; Cappy, A. (1997) Theoretical analysis of material and high frequencies performence of metamorphic In Al_As/InGa_As (0.3 < x <0.6) HEMT devices on GaAs substrate. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

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Abstract

A theoretical analysis is made of Metamorphic HEMT structures (MM-HEMT) versus LnAs molefraction. The material properties are analysed, as are the modeling of dc, ac, noise and high frequency performance of a device with 0.25 \xm gate length. This analysis shows that an InAs molefraction of 0.40 is an optimum composition in terms of low noise and power applications. In other ways, the performance of MM-HEMT structures are similar to those obtained with InP substrate devices.

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