Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

Lossy, Richard ; Heymann, Peter ; Würfl, Joachim ; Chaturvedi, Nidhi ; Müller, Stefan ; Köhler, Klaus (2002) Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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Abstract

We report on the technology and microwave characterization of AlGaN/GaN power HEMTs on SiC substrate. DC and S-parameter are discussed, together with load-pull results on devices up to 4mm gate width. A power density of 5.2 W/mm is obtained for devices up to 2 mm gate width. The maximum power level achieved is 13.8 W at 2 GHz.

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