Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

Lossy, Richard ; Heymann, Peter ; Würfl, Joachim ; Chaturvedi, Nidhi ; Müller, Stefan ; Köhler, Klaus (2002) Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

We report on the technology and microwave characterization of AlGaN/GaN power HEMTs on SiC substrate. DC and S-parameter are discussed, together with load-pull results on devices up to 4mm gate width. A power density of 5.2 W/mm is obtained for devices up to 2 mm gate width. The maximum power level achieved is 13.8 W at 2 GHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Lossy, Richard
Heymann, Peter
Würfl, Joachim
Chaturvedi, Nidhi
Müller, Stefan
Köhler, Klaus
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:37
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