van Heijningen, M. ; van Vliet, F.E. ; Quay, R. ; van Raay, F. ; Kiefer, R. ; Müller, S. ; Krausse, D. ; Seelmann-Eggebert, M. ; Mikulla, M. ; Schlechtweg, M.
(2005)
Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technol-ogy are presented. The MMICs are designed using CPW technology on a 390 µm thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28.6 dBm at 28 GHz. The power amplifier shows a measured small-signal gain of 10.7 dB at 25.5 GHz and output power of 34.1 dBm at 27 GHz. Both MMICs have a very good yield and performance for a first iteration design.
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