GaAs MESFET SRAM using a new high speed memory cell

Bernal, A. ; Ribas, R.P. ; Guyot, A. (1997) GaAs MESFET SRAM using a new high speed memory cell. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.

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Abstract

This paper presents an experimental lkb GaAs MESFET static RAM using a novel high speed memory cell. The array overcomes the subtbreshold leakage currents drawbacks inherent to conventional cell using a particular word/bit lines biasing. Power consumption is reduced by powering down the parts of the array not selected. An address access time of 1ns with 20 mA/cell power consumption has been obtained. The RAM can be operated at the single supply voltage of IV up to 2V.

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