High Power Performances of AlGaN/GaN HEMTs On Sapphire Substrate At F=4GHz

Vellas, N. ; Gaquiere, C. ; Guhel, Y. ; Werquin, M. ; Ducatteau, D. ; Boudart, B. ; de Jaeger, J.C. (2002) High Power Performances of AlGaN/GaN HEMTs On Sapphire Substrate At F=4GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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Abstract

The high potential at microwave frequencies of AlGaN/GaN HEMTs on sapphire substrate for power application has been demonstrated in this paper. An output power density close to 5W/mm has been measured on a 2x25x0.5µm² HEMT on sapphire substrate. This result is very interesting because the devices have not been passivated. At present time, it is the best power result in Europe on this substrate.

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