High efficiency 10Gb/s optical modulator driver amplifier using a power pHEMT technology

Shohat Nightingale, J. ; Robertson, I. D. ; Nightingale, S. J. (2005) High efficiency 10Gb/s optical modulator driver amplifier using a power pHEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper presents the design and performance of a high efficiency GaAs MMIC distributed amplifier for 10Gb/s optical driver applications. The power consumption is only 550mW, approximately 40% lower than typical reported results for this application. It is shown that while the commonly-used cascode topology gives higher gain-BW performance, the ordinary common-source design gives better efficiency and stability performance. This makes it a better choice for 10Gb/s applications when a suitable high power pHEMT process is used.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Shohat Nightingale, J.
Robertson, I. D.
Nightingale, S. J.
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DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:23
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