Pacheco, Sergio P. ; Zurcher, Peter ; Young, Steven R. ; Weston, Don ; Dauksher, William J. ; Auciello, Orlando ; Carlisle, John A. ; Kane, Neil ; Birrell, James P.
(2005)
Characterization of low-temperature ultrananocrystalline TM diamond RF MEMS resonators.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
For the first time working MEMS resonators have been produced using low-temperature deposited (550◦C)ultrananocrystalline TM diamond (UNCDTM) films. Using a lumped-element model to fit experimental data, UNCD materials properties such as a Young’s modulus of 710 GPa and an acoustic velocity of 14,243 m/s have been deduced. This is the highest acoustic velocity measured to date for a diamond MEMS structural layer deposited at low temperatures. A 10 MHz resonator shows a DC-tunability of the resonance frequency of 15%bet ween 15 and 25 V and the break down voltage behavior shows electrostatic break-down rather than electro-mechanical pull-down for higher frequency devices. Good resonant frequency reproducibility is observed when cycling the resonators over bias voltages from 15 to 25 V and over RF power levels of-10 to 10 dBm.
Keywords— MEMS resonator, resonant frequency, diamond, UNCD, acoustic velocity
Abstract
For the first time working MEMS resonators have been produced using low-temperature deposited (550◦C)ultrananocrystalline TM diamond (UNCDTM) films. Using a lumped-element model to fit experimental data, UNCD materials properties such as a Young’s modulus of 710 GPa and an acoustic velocity of 14,243 m/s have been deduced. This is the highest acoustic velocity measured to date for a diamond MEMS structural layer deposited at low temperatures. A 10 MHz resonator shows a DC-tunability of the resonance frequency of 15%bet ween 15 and 25 V and the break down voltage behavior shows electrostatic break-down rather than electro-mechanical pull-down for higher frequency devices. Good resonant frequency reproducibility is observed when cycling the resonators over bias voltages from 15 to 25 V and over RF power levels of-10 to 10 dBm.
Keywords— MEMS resonator, resonant frequency, diamond, UNCD, acoustic velocity
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Documento relativo ad un convegno o altro evento
(Atto)
Autori
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:24
URI
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Tipologia del documento
Documento relativo ad un convegno o altro evento
(Atto)
Autori
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:24
URI
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