Characterization of low-temperature ultrananocrystalline TM diamond RF MEMS resonators

Pacheco, Sergio P. ; Zurcher, Peter ; Young, Steven R. ; Weston, Don ; Dauksher, William J. ; Auciello, Orlando ; Carlisle, John A. ; Kane, Neil ; Birrell, James P. (2005) Characterization of low-temperature ultrananocrystalline TM diamond RF MEMS resonators. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

For the first time working MEMS resonators have been produced using low-temperature deposited (550◦C)ultrananocrystalline TM diamond (UNCDTM) films. Using a lumped-element model to fit experimental data, UNCD materials properties such as a Young’s modulus of 710 GPa and an acoustic velocity of 14,243 m/s have been deduced. This is the highest acoustic velocity measured to date for a diamond MEMS structural layer deposited at low temperatures. A 10 MHz resonator shows a DC-tunability of the resonance frequency of 15%bet ween 15 and 25 V and the break down voltage behavior shows electrostatic break-down rather than electro-mechanical pull-down for higher frequency devices. Good resonant frequency reproducibility is observed when cycling the resonators over bias voltages from 15 to 25 V and over RF power levels of-10 to 10 dBm. Keywords— MEMS resonator, resonant frequency, diamond, UNCD, acoustic velocity

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Pacheco, Sergio P.
Zurcher, Peter
Young, Steven R.
Weston, Don
Dauksher, William J.
Auciello, Orlando
Carlisle, John A.
Kane, Neil
Birrell, James P.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:24
URI

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