Abstract

In this work, we have compared the DC and RF performances of two different PHEMT devices both based on a double D doped AlGaAs/InGaAs/AlGaAs Strained Single Quantum Well , with the gate evaporated either on an AlGaAs surface or on a GaAs one. In the last case an AlAs stop etch layer was introduced in the vertical structure. The effects on the stability of the RF performances during the device RF operation when the gate evaporation was performed either on GaAs or on AlGaAs were investigated too.