Abstract

This work aims to study the feasibility of the integration, on the same chip, of GaAs pixel detectors and front-end electronics employing GaAs MESFETs or HEMTs. Interest of a full GaAs integrated systems are in X and y-ray spectroscopy and imaging for scientific, industrial and medical applications. The current status and recent experimental results regarding radiation detectors on semi-insulating GaAs are presented. Measurements of the relevant parameters of GaAs FETs suitable for the stringent requirements of a spectroscopy-graded front-end amplifier are analysed. Some still open problems regarding the detector-electronics integration are highlighted.