GaAs pixel detectors with integrated electronics: experimental basis and feasibility study

Bertuccio, G. ; Canali, C. ; Cetronio, A. ; De Geronimo, G. ; Giannini, F. ; Graffitti, R. ; Lanzieri, C. ; Longoni, A. ; Nava, F. ; Orengo, G. ; Padovini, G. ; Peroni, M. (1997) GaAs pixel detectors with integrated electronics: experimental basis and feasibility study. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

This work aims to study the feasibility of the integration, on the same chip, of GaAs pixel detectors and front-end electronics employing GaAs MESFETs or HEMTs. Interest of a full GaAs integrated systems are in X and y-ray spectroscopy and imaging for scientific, industrial and medical applications. The current status and recent experimental results regarding radiation detectors on semi-insulating GaAs are presented. Measurements of the relevant parameters of GaAs FETs suitable for the stringent requirements of a spectroscopy-graded front-end amplifier are analysed. Some still open problems regarding the detector-electronics integration are highlighted.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Bertuccio, G.
Canali, C.
Cetronio, A.
De Geronimo, G.
Giannini, F.
Graffitti, R.
Lanzieri, C.
Longoni, A.
Nava, F.
Orengo, G.
Padovini, G.
Peroni, M.
Settori scientifico-disciplinari
DOI
Data di deposito
01 Dic 2005
Ultima modifica
17 Feb 2016 14:24
URI

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