A novel closed-form approach for comparing the Q-factor responses between the asymmetric and symmetric on-chip inductors

Horng, T.S. ; Huang, C.H. ; Han, F.Y. ; Li, C.J. (2005) A novel closed-form approach for comparing the Q-factor responses between the asymmetric and symmetric on-chip inductors. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper proposes an equivalent transmission-line circuit for on-chip inductors and derives the quality (Q) factor response in terms of the transmission-line circuit parameters in closed form. The derived formulas are general and suitable for all kinds of on-chip inductors to account for their frequency dependences of Q factors. For demonstration, a series of asymmetric inductors and another series of same valued symmetric inductors have been fabricated on the same silicon substrate. The measured Q-factor responses for both kinds of inductors agree quite well with the formula predictions. The symmetric inductors have a higher equivalent characteristic impedance so as to correspond to a higher peak Q-factor frequency than the asymmetric inductors. The presented formulas can also uniquely distinguish the improvement in Q-factor responses due to the reduction of conductor loss or dielectric loss.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Horng, T.S.
Huang, C.H.
Han, F.Y.
Li, C.J.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:24
URI

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