A 17 to 26 GHz micromixer in SiGe BiCMOS technology

Bao, Mingquan ; Li, Yinggang (2005) A 17 to 26 GHz micromixer in SiGe BiCMOS technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
Full text disponibile come:
[thumbnail of GA052092.PDF]
Anteprima
Documento PDF
Download (427kB) | Anteprima

Abstract

Wereport, for the first time, our experimental results of a high frequency Micromixer operating from 17 to 26 GHz in SiGe technology. Good linearity performance is achieved:typically 0 dBm input-referred P-1dB and 8 dBm IIP3.The conversion gain and double side band noise figureat23GHzRFinput are –3.6 dB and 18.2 dB, respectively.The local oscillator power required for proper operation is below 0 dBm and the DC power consumption is 86 mW for a 3.3 V supply. For purpose of comparison, a Gilbert mixer isalso implanted on the same wafer.The experimental results are compared for the two active mixers.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Bao, Mingquan
Li, Yinggang
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:24
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^