Bao, Mingquan ; Li, Yinggang
(2005)
A 17 to 26 GHz micromixer in SiGe BiCMOS technology.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
Wereport, for the first time, our experimental results of a high frequency Micromixer operating from 17 to 26 GHz in SiGe technology. Good linearity performance is achieved:typically 0 dBm input-referred P-1dB and 8 dBm IIP3.The conversion gain and double side band noise figureat23GHzRFinput are –3.6 dB and 18.2 dB, respectively.The local oscillator power required for proper operation is below 0 dBm and the DC power consumption is 86 mW for a 3.3 V supply. For purpose of comparison, a Gilbert mixer isalso implanted on the same wafer.The experimental results are compared for the two active mixers.
Abstract