A 17 to 26 GHz micromixer in SiGe BiCMOS technology

Bao, Mingquan ; Li, Yinggang (2005) A 17 to 26 GHz micromixer in SiGe BiCMOS technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

Wereport, for the first time, our experimental results of a high frequency Micromixer operating from 17 to 26 GHz in SiGe technology. Good linearity performance is achieved:typically 0 dBm input-referred P-1dB and 8 dBm IIP3.The conversion gain and double side band noise figureat23GHzRFinput are –3.6 dB and 18.2 dB, respectively.The local oscillator power required for proper operation is below 0 dBm and the DC power consumption is 86 mW for a 3.3 V supply. For purpose of comparison, a Gilbert mixer isalso implanted on the same wafer.The experimental results are compared for the two active mixers.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Bao, Mingquan
Li, Yinggang
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:24
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